![]() 8)), and more recently using ferroelectric (FE) oxide as the tunnel barrier as in a Fe/BaTiO 3/(La,Sr)MnO 3 junction 9 where significant voltage control of tunnel magnetoresistance 6 was realized at rather low temperatures. ![]() Previous proposals include integrating a spin valve 5 or magnetic tunnel junction (MTJ) 6 unit onto a multiferroic layer (for example, Cr 2O 3 (ref. One promising solution is to develop voltage-write MRAM devices 4, that is, manipulating magnetization directly using electric voltage rather than current. This would also cause severe cross-talk among neighbouring cells when miniaturizing the device size for higher storage capacity. However, mass production of MRAMs has long been hampered by their high writing energy from Ampère-current-induced magnetic field 2, 3. Magnetoresistive random access memory (MRAM), because of its moderately fast access time and almost unlimited endurance, has offered a tantalizing application potential as next-generation non-volatile integrated memories 1.
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